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| NPN Silicon Darlington Transistors BCV 29 BCV 49 For general AF applications q High collector current q High current gain q Complementary types: BCV 28, BCV 48 (PNP) q Type BCV 29 BCV 49 Marking EF EG Ordering Code (tape and reel) Q62702-C1853 Q62702-C1832 Pin Configuration 1 2 3 4 B C E C Package1) SOT-89 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol BCV 29 VCE0 VCB0 VEB0 IC ICM IB IBM P1tot Tj Tstg 30 40 10 Values BCV 49 60 80 10 500 800 100 200 1 150 - 65 ... + 150 Unit V mA W C 75 20 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BCV 29 BCV 49 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCV 29 BCV 49 Collector-base breakdown voltage IC = 100 A BCV 29 BCV 49 Emitter-base breakdown voltage, IE = 10 A Collector cutoff current VCB = 30 V VCB = 60 V VCB = 30 V, TA = 150 C VCB = 60 V, TA = 150 C Emitter cutoff current, VEB = 4 V DC current gain1) IC = 100 A, VCE = 1 V IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V IC = 0.5 A, VCE = 5 V BCV 29 BCV 49 BCV 29 BCV 49 BCV 29 BCV 49 BCV 29 BCV 49 VCEsat VBEsat BCV 29 BCV 49 BCV 29 BCV 49 IEB0 hFE 4000 2000 10000 4000 20000 10000 4000 2000 - - - - - - - - - - - - - - - - - - - - 1 1.5 V V(BR)CE0 30 60 V(BR)CB0 40 80 V(BR)EB0 ICB0 - - - - - - - - - - 100 100 10 10 100 nA nA A A Values typ. max. Unit V - - - - - - - - - - 10 nA - Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage1) IC = 100 mA; IB = 0.1 mA AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz 1) fT Cobo - - 150 3.5 - - MHz pF Pulse test: t 300 s, D = 2 %. Semiconductor Group 2 BCV 29 BCV 49 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector cutoff current ICB0 = f (TA) Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 3 BCV 29 BCV 49 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 1000 Base-emitter saturation voltage IC = f (VBEsat) hFE = 1000 Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) DC current gain hFE = f (IC) VCE = 5 V Semiconductor Group 4 |
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